%0 Journal Article
%T DEPENDENCE OF STRUCTURE OF BURIED SiC LMERS ON C~+ IMPLANTATION DOSE<br>SiC埋层结构与C^＋注入剂量关系
%A YAN Hui
%A CHEN Guanghua
%A <br>严辉
%A 陈光华
%J 材料研究学报
%D 1998
%I 
%X Buried SiC layers of different implantation doses were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C+ ions implanted into Si substrates. In the present study the beam energy was 50keV and the ion dose was varied from 3.0×1017cm-2 to
%K MEVVA ion source
%K ion beam synthesis
%K buried SiC layers<br>MEVVA离子源
%K 离子束合成
%K 注入剂量
%K 碳化硅埋层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=0378B708624353950B4460BB433D2040&yid=8CAA3A429E3EA654&vid=59906B3B2830C2C5&iid=38B194292C032A66&sid=BF112261B65CB9C9&eid=119B6C0AA09DE6B9&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=1