THE PROGRESS OF SiC SINGLE CRYSTAL GROWTH AND ITS DEVICES
SiC单晶的生长及其器件研制进展

SiC is a material with large band gap, high thermal conductivity, high electron saturation velocity, high breakdown voltage and low dielectric constant. Its promising properties make it a attractive material for high-frequency, high-power, high-temperature and radiation stable electronicdevices, UV dectector and short wave LED's. This review shows the progress of SiC bulk and filmgrowth and its devices.