%0 Journal Article
%T THE PROGRESS OF SiC SINGLE CRYSTAL GROWTH AND ITS DEVICES<br>SiC单晶的生长及其器件研制进展
%A WANG Yinshu
%A LI Jinmin
%A LIN Lanying
%A <br>王引书
%A 李晋闽
%A 林兰英
%J 材料研究学报
%D 1998
%I 
%X SiC is a material with large band gap, high thermal conductivity, high electron saturation velocity, high breakdown voltage and low dielectric constant. Its promising properties make it a attractive material for high-frequency, high-power, high-temperature and radiation stable electronicdevices, UV dectector and short wave LED's. This review shows the progress of SiC bulk and filmgrowth and its devices.
%K SiC single crystal growth
%K epilayer growth
%K SiC devices<br>单晶生长
%K 外延生长
%K 半导体
%K 碳化硅器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=76BEB3DDABD97FD8&yid=8CAA3A429E3EA654&vid=59906B3B2830C2C5&iid=38B194292C032A66&sid=FD7C952458BFB5D8&eid=9CA95D22FC1D537C&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=1&reference_num=1