THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS
纳米Si薄膜的结构及压阻效应

In this report Authors employed the HREM and STM to detect the micro-structure of nc-Si:H films, which are fabricated by the PECVD deposition method. The nc-Si:H films are consisted with a mass of micro-grains and a great deal of interfaces among grains. The unique structrue character of nc-Si:H films is the main reason for the largest piezo-resistance effect and a higher value of hydrogen content in the films. The relationship of microstructure and the piezo-resistance effect of films were discussed. It is suggested that the nc-Si: H film may becbme an idealized sensor materials.