PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS
分子束外延材料表面椭圆缺陷的研究进展

This paper reviews the study on the classification, characteristics, origination and eliminating methods of surface oval defects on Molecular Epitaxy Beam (MBE) grown materials. Several possible origins such as gallium droplets, gallium oxide and substrate contamination are introduced emphatically, and the corresponding improvement methods are suggested.