%0 Journal Article
%T PROGRESS IN SURFACE OVAL DEFECTS STUDY ON MOLECULAR BEAM EPITAXY GROWN MATERIALS<br>分子束外延材料表面椭圆缺陷的研究进展
%A WANG Hongmei
%A KONG Meiying
%A <br>王红梅
%A 孔梅影
%J 材料研究学报
%D 1997
%I 
%X This paper reviews the study on the classification, characteristics, origination and eliminating methods of surface oval defects on Molecular Epitaxy Beam (MBE) grown materials. Several possible origins such as gallium droplets, gallium oxide and substrate contamination are introduced emphatically, and the corresponding improvement methods are suggested.
%K MBE oval defects Ga droplets Ga oxide substrate contanimation<br>分子束外延
%K 椭圆缺陷
%K 薄膜
%K 衬底沾污
%K 镓
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=A34FC81FBC4974E7&yid=5370399DC954B911&vid=708DD6B15D2464E8&iid=E158A972A605785F&sid=5FF9F4F7CB1800C7&eid=3622B70F9C54A9CC&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=7