Homoepitaxial Growth and Photoluminescence Properties of Hierarchical In_2O_3 Nanostuctures
分级氧化铟纳米结构的同质外延生长及发光性能

Large-scale hierarchical In2O3 nanostructures have been synthesized using vapor transport and condensation method without any catalyst, taking advantage of the self-assembly property and epitaxial vapor-solid (VS) growth mechanism, and were characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results show that the In2O3 nanorods are single crystals with body-centered cubic (bcc) structure, epitaxially growing along <100> and <111> directions. Homoepitaxial interconnections can be observed at the branched junctions, and the growth process of the nanorods arrayed on the microcrystals is a combination of “secondary nucleation” and VS process. The room-temperature photoluminescence spectrum of In2O3 nanostructures exhibited ultraviolet emission at 386 nm and blue emission at 435 nm, which can be ascribed to the near-band-edge (NBE) emission and the possible recombination of a photo-excited hole with an electron occupying the singly ionized oxygen vacancies, respectively.