%0 Journal Article
%T Homoepitaxial Growth and Photoluminescence Properties of Hierarchical In_2O_3 Nanostuctures<br>分级氧化铟纳米结构的同质外延生长及发光性能
%A GUO Taibo CHEN Yiqing ZHANG Xinhua LIU Lizhu
%A <br>郭太波
%A 陈翌庆
%A 张新华
%A 刘利柱
%J 材料研究学报
%D 2011
%I 
%X Large-scale hierarchical In2O3 nanostructures have been synthesized using vapor transport and condensation method without any catalyst, taking advantage of the self-assembly property and epitaxial vapor-solid (VS) growth mechanism, and were characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The results show that the In2O3 nanorods are single crystals with body-centered cubic (bcc) structure, epitaxially growing along  <100>  and <111> directions. Homoepitaxial interconnections can be observed at the branched junctions, and the growth process of the nanorods arrayed on the microcrystals is a combination of “secondary nucleation” and VS process. The room-temperature photoluminescence spectrum of In2O3 nanostructures exhibited ultraviolet emission at 386 nm and blue emission at 435 nm, which can be ascribed to the near-band-edge (NBE) emission and the possible recombination of a photo-excited hole with an electron occupying the singly ionized oxygen vacancies, respectively.
%K inorganic non-metallic materials
%K In2O3
%K 
%K nanostructure
%K hierarchical
%K homoepitaxial<br>无机非金属材料
%K 氧化铟
%K 纳米结构
%K 分级
%K 同质外延
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=3924FE186C90DEE4DA02ECE6F951D11D&yid=9377ED8094509821&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=DF92D298D3FF1E6E&eid=59906B3B2830C2C5&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=0