THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
微波等离子体化学气相沉积法生长取向性纳米氮化铝薄膜

By microwave plasma enhanced chemical vapor deposition we prepared highly (002) oriented AIN nanometer thin film on Si(111) substrate. The effect on sudece morphology. film structure and deposition rate at various deposition conditions had been researched