%0 Journal Article
%T THE PREMRAfION OF ORIENTED AlN NANOMETER THIN FILMS BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION<br>微波等离子体化学气相沉积法生长取向性纳米氮化铝薄膜
%A XIE Song
%A MENG Guangyao
%A PENG Dingkun
%A <br>孟广耀
%A 谢松
%A 彭定坤
%J 材料研究学报
%D 1998
%I 
%X By microwave plasma enhanced chemical vapor deposition we prepared highly (002) oriented AIN nanometer thin film on Si(111) substrate. The effect on sudece morphology. film structure and deposition rate at various deposition conditions had been researched
%K microwave plasma
%K chemical vapor deposition
%K AIN film
%K growth mechanism<br>微波等离子体
%K 化学气相沉积
%K 氮化铝膜
%K 生长机制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=0378B70862435395E88FD885AE36E537&yid=8CAA3A429E3EA654&vid=59906B3B2830C2C5&iid=E158A972A605785F&sid=F7BB24011DC0D223&eid=5F8BAECF36EB55E2&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=2&reference_num=2