Structure and properties of ta-C films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
衬底偏压对四面体非晶碳膜结构和性能的影响

Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology. The microstructure of ta-C films was measured by visible Raman spectroscopy and the spectra were fitted with a single skewed Lorentzian peak described by BWF function. The coupling coefficient characterizes the asymmetric degree of the spectra and is correlated with the sp3 content. The surface morphology and mechanical properties were researched respectively by AFM and Nano-lndentor. When the substrate bias is -80 V, the sp3 content is the most, the root mean square surface roughness is least (Rq=0.23 nm) and hardness (51.49 GPa), Young's modulus (512.39 GPa), and critical scratching load (11.72 mN) are the highest. As the substrate bias increases or decreases, the sp3 content and other properties lower correspondingly.