CONTROLLING DEPOSITION RATE OF ITO FILM BY SPECTROMETRY
光谱法控制ITO膜沉积速率

In the ITO films deposition by reactive magnetron sputtering, the deposition rate of ITO film will change with the carrying out of sputtering. We provide a new method to monitor the sputtering viel by detecting the characteristic light intensity of plasma spetra, and the process using this method is presentCd in thc ITO films deposition in the paper.