全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

C- V CHARACTERISTICS OF MIS STRUCTURES WITH LANGMURI-BLODGETT POLYIMIDE FILMS
聚酰亚胺LB膜MIS结构C—V特性

Keywords: LB polyimide,MIS tunnel junction,double capacitance humps,minority carrries,injection,like-metal-Semiconductor junction
聚酰亚胺膜
,结构,特性

Full-Text   Cite this paper   Add to My Lib

Abstract:

C-V technology is an effective method of studing semiconductor interfaCe. This paper will rePort some interesting new results of C-V characteristics which are obtained from MIS tunnel junction with LB insulting films.The substrates used in present resear

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133