%0 Journal Article
%T C- V CHARACTERISTICS OF MIS STRUCTURES WITH LANGMURI-BLODGETT POLYIMIDE FILMS<br>聚酰亚胺LB膜MIS结构C—V特性
%A LIN Hat'an
%A WU Chongruo
%A <br>林海安
%A 吴冲若
%J 材料研究学报
%D 1994
%I 
%X C-V technology is an effective method of studing semiconductor interfaCe. This paper will rePort some interesting new results of C-V characteristics which are obtained from MIS tunnel junction with LB insulting films.The substrates used in present resear
%K LB polyimide
%K MIS tunnel junction
%K double capacitance humps
%K minority carrries
%K injection
%K like-metal-Semiconductor junction<br>聚酰亚胺膜
%K 结构
%K 特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=82FA0196E92019E834066445E2BDBFD4&yid=3EBE383EEA0A6494&vid=5D311CA918CA9A03&iid=CA4FD0336C81A37A&sid=7E8E8B150580E4AB&eid=08805F9252973BA4&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=1&reference_num=2