XPS ANALYSIS OF RF-SPUTTERED SiC THIN FILMS
溅射SiC薄膜的XPS分析

The structural characteristics of RF-sputtered SiC thin filmshas been analysed by XPS technique.The chemical shift defined bythe relative shift of Si(2p) and C(1s) peaks,as well as the loss energiesof the plasmon loss features observed in the spectra were measured.Theresults of the measurement have been used to characterize the film struc-ture.Further undersanding of the chemical bonding nature,composition anddefects of the RF-sputtered SiC thin films is obtained.