%0 Journal Article
%T XPS ANALYSIS OF RF-SPUTTERED SiC THIN FILMS<br>溅射SiC薄膜的XPS分析
%A TANG Haipeng WANG Yinghua TIAN Minbo
%A <br>汤海鹏
%A 王英华
%A 田民波
%A 李恒德
%J 材料研究学报
%D 1989
%I 
%X The structural characteristics of RF-sputtered SiC thin filmshas been analysed by XPS technique.The chemical shift defined bythe relative shift of Si(2p) and C(1s) peaks,as well as the loss energiesof the plasmon loss features observed in the spectra were measured.Theresults of the measurement have been used to characterize the film struc-ture.Further undersanding of the chemical bonding nature,composition anddefects of the RF-sputtered SiC thin films is obtained.
%K SiC
%K RF-sputtered film
%K chemical shift
%K plasmon loss feature<br>SiC
%K 射频溅射薄膜
%K 化学位移
%K 等离子体激元损失峰
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5b3ab970f71a803deacdc0559115bfcf0a068cd97dd29835&cid=84529ca2b2e519ac&jid=c101c4c04993b4d94fcd8446e6cbeb3b&aid=2f1ded7b1ddd038c&yid=1833a6aa51f779c1&vid=38b194292c032a66&iid=38b194292c032a66&sid=e2e0fbfe4d7efb94&eid=fba00558c57d9c11&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=1&reference_num=1