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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric
MAO Wei, ZHANG Jin-Cheng, XUE Jun-Shuai, HAO Yao, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, XU Sheng-Rui, YANG Lin-An, BI Zhi-Wei, LIANG Xiao-Zhen, ZHANG Jin-Feng, KUANG Xian-Wei,
Abstract:
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