%0 Journal Article
%T Fabrication and Characteristics of AlInN/AlN/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric<br>
%A MAO Wei
%A ZHANG Jin-Cheng
%A XUE Jun-Shuai
%A HAO Yao
%A MA Xiao-Hua
%A WANG Chong
%A LIU Hong-Xia
%A XU Sheng-Rui
%A YANG Lin-An
%A BI Zhi-Wei
%A LIANG Xiao-Zhen
%A ZHANG Jin-Feng
%A KUANG Xian-Wei
%A <br>
%J 中国物理快报
%D 2010
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=B135E7A8D02A569ADB7C7F0C6AF77832&yid=140ECF96957D60B2&vid=DB817633AA4F79B9&iid=59906B3B2830C2C5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0