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材料研究学报 1994
THE ION SENSITIVE BEHAVIOR OF Ta_2O_5 MEMBRANE
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Abstract:
The H+ sensitive behavior of Ta2O5 has ben reported on the letter. The magnetron-sputtering method was chosen for the Ta2O5 membranedeposition. C-V measurments of MIS structures were uesd for evaluatingthe stability of the membranes. It is shown that the
