%0 Journal Article
%T THE ION SENSITIVE BEHAVIOR OF Ta_2O_5 MEMBRANE<br>Ta2O5薄膜的离子敏感特性
%A WU Chongruo
%A LIU Gang
%A LIN Haian
%A QIU Jiezheng
%A <br>吴冲若
%A 刘刚
%A 林海安
%A 邱洁真
%J 材料研究学报
%D 1994
%I 
%X The H+ sensitive behavior of Ta2O5 has ben reported on the letter. The magnetron-sputtering method was chosen for the Ta2O5 membranedeposition. C-V measurments of MIS structures were uesd for evaluatingthe stability of the membranes. It is shown that the
%K Ta_2O_5 membrane
%K ion sensitive
%K membrane electrode
%K stability<br>Ta2O5薄膜
%K 离子敏感
%K 稳定性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=82FA0196E92019E827AF15593FE320FD&yid=3EBE383EEA0A6494&vid=5D311CA918CA9A03&iid=94C357A881DFC066&sid=78BF76CF5B7CB0F2&eid=9B95A71E6639C039&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=0