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材料研究学报 1994
STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFT
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Abstract:
Ta2O5 used in double-layer gate insulator a-Si TFT is formed by anodizing Ta. its process is compatible with fabricating process of TFT and its performance is excellent. We use citric acid solution as electrolyte and constant-current source as the power.
