%0 Journal Article
%T STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFT<br>a—SiTFT复合栅绝层用阳极氧化Ta2O5的研究
%A XIONG Shaozhen
%A ZHANG Jiangiun
%A ZHOU Zhenhua
%A MENG Zhiguo
%A DAI Yongping
%A GU Chunzhi
%A MA Jingtao
%A DING Shibin
%A ZHAO Gengshen
%A <br>熊绍珍
%A 张建军
%A 周祯华
%A 孟志国
%A 戴永平
%A 谷纯芝
%A 马京涛
%A 丁世斌
%A 赵庚申
%J 材料研究学报
%D 1994
%I 
%X Ta2O5 used in double-layer gate insulator a-Si TFT is formed by anodizing Ta. its process is compatible with fabricating process of TFT and its performance is excellent. We use citric acid solution as electrolyte and constant-current source as the power.
%K a-Si TFT
%K Double-layer gate insulator
%K Redundance technology
%K AM-LCD<br>阳极氧化
%K 五氧化二钛
%K 薄膜晶体管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=82FA0196E92019E8DF8D07CE4967EA77&yid=3EBE383EEA0A6494&vid=5D311CA918CA9A03&iid=38B194292C032A66&sid=4290346F7268639E&eid=30897FA31CA3354D&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=4