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AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

Keywords: 73,40,Kp,85,60,Gz,81,05,Ea
光电探测器
,氮化铝,蓝宝石,AlGaN,波长

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Abstract:

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1i×10-6A/cm2 at the reversebias of 5V. The specific detectivity D* is estimated to be 3.3×1012cmHz1/2W-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.

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