%0 Journal Article
%T AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template
%A SANG Li-Wen
%A QIN Zhi-Xin
%A CEN Long-Bin
%A SHEN Bo
%A ZHANG Guo-Yi
%A LI Shu-Ping
%A CHEN Hang-Yang
%A LIU Da-Yi
%A KANG Jun-Yong
%A CHENG Cai-Jing
%A ZHAO Hong-Yan
%A LU Zheng-Xiong
%A DING Jia-Xin
%A ZHAO Lan
%A SI Jun-Jie
%A SUN Wei-Guo
%A <br>
%J 中国物理快报
%D 2008
%I 
%X We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1i×10-6A/cm2 at the reversebias of 5V. The specific detectivity D* is estimated to be 3.3×1012cmHz1/2W-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.
%K 73
%K 40
%K Kp
%K 85
%K 60
%K Gz
%K 81
%K 05
%K Ea<br>光电探测器
%K 氮化铝
%K 蓝宝石
%K AlGaN
%K 波长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=1D0474879B98179EDCF376F98AB3B7F4&yid=67289AFF6305E306&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=B799C1769FCACDC8&eid=4D7D059FFBF006B9&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=10