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Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition
Effects of Substrate Temperature and Nitrogen Pressure on Growth of AIN Films by Pulsed Laser Deposition

Keywords: 81,05,Ea,81,15,Fg,68,55,Jk
氮化铝
,薄膜,脉冲激光,沉积作用

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Abstract:

Highly oriented aluminium nitride (AIN) films are grown on p-Si (100) substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ= 33.15 ° corresponding to AIN h (100) crystalline orientation. The influences of substrate temperature and ambient nitrogen (N2) pressure on the crystallinity of A1N films are remarkable. At room temperature, when the ambient N2 pressure arises from 5 × 10^-6 Pa to 5 Pa, the crystallinity of the film becomes better. When the substrate temperature is 600℃, the film has the best crystallinity at 0.05 Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of A1-N bonds and surface morphology of AIN films are also studied.

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