%0 Journal Article
%T Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition<br>Effects of Substrate Temperature and Nitrogen Pressure on Growth of AIN Films by Pulsed Laser Deposition
%A LV Lei
%A LI Qing-Shan
%A LI Li
%A ZHANG Li-Chun
%A WANG Cai-Feng
%A QI Hong-Xia
%A <br>吕磊
%A 李清山
%A 李丽
%A 张立春
%A 王彩凤
%A 齐红霞
%J 中国物理快报
%D 2007
%I 
%X Highly oriented aluminium nitride （AIN） films are grown on p-Si （100） substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ= 33.15 ° corresponding to AIN h （100） crystalline orientation. The influences of substrate temperature and ambient nitrogen （N2） pressure on the crystallinity of A1N films are remarkable. At room temperature, when the ambient N2 pressure arises from 5 × 10^-6 Pa to 5 Pa, the crystallinity of the film becomes better. When the substrate temperature is 600℃, the film has the best crystallinity at 0.05 Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of A1-N bonds and surface morphology of AIN films are also studied.
%K 81
%K 05
%K Ea
%K 81
%K 15
%K Fg
%K 68
%K 55
%K Jk<br>氮化铝
%K 薄膜
%K 脉冲激光
%K 沉积作用
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB82C6DF5308374D448&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=0B39A22176CE99FB&sid=385E3C2062167B88&eid=D8414BC1307BF1A3&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0