Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared (NIR) photoluminescence (980nm and 1032nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the 2F5/2 and 2 F7/2 levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.