%0 Journal Article %T Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon %A ZHANG Jian-Guo %A WANG Xiao-Xin %A CHENG Bu-Wen %A YU Jin-Zhong %A WANG Qi-Ming %A
张建国 %A 王晓欣 %A 成步文 %A 余金中 %A 王启明 %J 中国物理快报 %D 2006 %I %X Intense room-temperature near infrared (NIR) photoluminescence (980nm and 1032nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the 2F5/2 and 2 F7/2 levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective. %K 61 %K 72 %K Tt %K 78 %K 55 %K 2m %K 76 %K 30 %K Kg
红外线 %K 光致发光 %K SiO2薄膜 %K 硅 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=0D9520485622868FBEBD2820BCB22D2B&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=C7323805325ABBEB&eid=5D16F3E1BCE7CF8E&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=1&reference_num=25