%0 Journal Article
%T Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon
%A ZHANG Jian-Guo
%A WANG Xiao-Xin
%A CHENG Bu-Wen
%A YU Jin-Zhong
%A WANG Qi-Ming
%A <br>张建国
%A 王晓欣
%A 成步文
%A 余金中
%A 王启明
%J 中国物理快报
%D 2006
%I 
%X Intense room-temperature near infrared (NIR) photoluminescence (980nm and 1032nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the 2F5/2 and 2 F7/2 levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.
%K 61
%K 72
%K Tt
%K 78
%K 55
%K 2m
%K 76
%K 30
%K Kg<br>红外线
%K 光致发光
%K SiO2薄膜
%K 硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=0D9520485622868FBEBD2820BCB22D2B&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=C7323805325ABBEB&eid=5D16F3E1BCE7CF8E&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=1&reference_num=25