Variability on Raman Shift to Stress Coefficient of Porous Silicon

Porous silicon film is a capillary-like medium, which is able to reveal different meso-elastic modulus with porosity. During the preparation of porous silicon samples, the capillary force is a non-classic force related to the liquid evaporation which directly influences the evolution of residual stress. In this study, a non-linear relation of Raman shift to stress coefficient and the porosity is obtained from the elastic modulus measured with nano-indentation by Bellet et al. J. Appl. Phys. 60 (1996) 3772] Dynamic capillarity during the drying process of porous silicon is investigated using micro-Raman spectroscopy, and the results reveal that the residual stress resulted from the capillarity increased rapidly. Indeed, the dynamic capillarity has a close relationship with a great deal of micro-pore structures of the porous silicon.