%0 Journal Article
%T Variability on Raman Shift to Stress Coefficient of Porous Silicon
%A LEI Zhen-Kun
%A KANG Yi-Lan
%A CEN Hao
%A HU Ming
%A <br>雷振坤
%A 亢一澜
%A 岑皓
%A 胡明
%J 中国物理快报
%D 2006
%I 
%X Porous silicon film is a capillary-like medium, which is able to reveal different meso-elastic modulus with porosity. During the preparation of porous silicon samples, the capillary force is a non-classic force related to the liquid evaporation which directly influences the evolution of residual stress. In this study, a non-linear relation of Raman shift to stress coefficient and the porosity is obtained from the elastic modulus measured with nano-indentation by Bellet et al. J. Appl. Phys. 60 (1996) 3772] Dynamic capillarity during the drying process of porous silicon is investigated using micro-Raman spectroscopy, and the results reveal that the residual stress resulted from the capillarity increased rapidly. Indeed, the dynamic capillarity has a close relationship with a great deal of micro-pore structures of the porous silicon.
%K 81
%K 05
%K Rm
%K 81
%K 70
%K Fy
%K 78
%K 30
%K Am<br>可变性
%K Raman转换
%K 应力系数
%K 多孔渗水硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=511DF132CF8E06F782338BD7E4F09AA9&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=B31275AF3241DB2D&sid=393FA6E3D9B6498B&eid=E8EF49FD27992E02&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=1&reference_num=14