Novel lateral IGBT with n-region controlled anode on SOI substrate
一种基于SOI基的N区控制阳极LIGBT新结构

A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate,called an n-region controlled anode LIGBT (NCA-LIGBT),is proposed and discussed.The n-region controlled anode concept results in fast switch speeds,efficient area usage and e?ective suppression NDR in forward I-V characteristics.Simulation results of the key parameters (n-region doping concentration,length,thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state...