%0 Journal Article
%T Novel lateral IGBT with n-region controlled anode on SOI substrate<br>一种基于SOI基的N区控制阳极LIGBT新结构
%A Chen Wensuo
%A Xie Gang
%A Zhang Bo
%A Li Zehong
%A Li Zhaoji
%A <br>陈文锁
%A 谢刚
%A 张波
%A 李泽宏
%A 李肇基
%J 半导体学报
%D 2009
%I 
%X A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate,called an n-region controlled anode LIGBT (NCA-LIGBT),is proposed and discussed.The n-region controlled anode concept results in fast switch speeds,efficient area usage and e?ective suppression NDR in forward I-V characteristics.Simulation results of the key parameters (n-region doping concentration,length,thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state...
%K turn-off time
%K on-state voltage drop
%K NDR
%K power ICs<br>关断时间
%K 通态饱和压降
%K NDR
%K 功率IC
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D2CE1531191C32B21A6C3197DD1DF795&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=4E980A6E69D791A0&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0