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Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method

Keywords: 77,84,Bw,78,55,-m,81,05,Dz,81,10,Dn
ZnO单晶
,垂直布里奇曼法,晶体生长,电学性质,光学性质

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Abstract:

Zinc oxide (ZnO) single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.

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