%0 Journal Article
%T Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method
%A LI Xin-Hua
%A XU Jia-Yue
%A JIN Min
%A SHEN Hui
%A LI Xiao-Min
%A <br>李新华
%A 徐家跃
%A 金敏
%A 申慧
%A 李效民
%J 中国物理快报
%D 2006
%I 
%X Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.
%K 77
%K 84
%K Bw
%K 78
%K 55
%K -m
%K 81
%K 05
%K Dz
%K 81
%K 10
%K Dn<br>ZnO单晶
%K 垂直布里奇曼法
%K 晶体生长
%K 电学性质
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=2310DDCCCFAC84B54C72E6488D67C1C0&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=59906B3B2830C2C5&sid=B68609DDFEAD78D6&eid=51C1C06ED4147660&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=1&reference_num=17