Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing
退火后无应变Ga1-xInxNyAs-y/GaAs量子阱的带隙

According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in Ga1-xInxNyAs-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.