%0 Journal Article
%T Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing<br>退火后无应变Ga1-xInxNyAs-y/GaAs量子阱的带隙
%A Wen Yuhu
%A Tang Jiyu
%A Zhao Chuanzhen
%A Wu Liangzhen
%A Kong Yunting
%A Tang Lili
%A Liu Chao
%A Wu Lifeng
%A Li Shunfang
%A Chen Junfang
%A <br>文于华
%A 唐吉玉
%A 赵传阵
%A 吴靓臻
%A 孔蕴婷
%A 汤莉莉
%A 刘超
%A 吴利锋
%A 李顺方
%A 陈俊芳
%J 半导体学报
%D 2008
%I 
%X According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in Ga1-xInxNyAs-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.
%K GaInNAs/GaAs
%K quantum well
%K bandgap energy
%K annealing<br>GaInNAs/GaAs
%K 量子阱
%K 带隙
%K 退火
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8A31FCFC78E19A13B95AEA5B229BA950&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=03F1579EF92A5A32&eid=91C9056D8E8856E0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17