Bulk Single Crystal Growth and Properties of In-Doped ZnO
铟掺杂ZnO体单晶的生长及其性质

The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport (CVT) method.Indium doped n-type ZnO single crystals with a carrier concentration of 1E18~1E19cm-3 have been obtained reproducibly by CVT.The doped indium exhibits high activation efficiency as a shallow donor in a ZnO single crystal.As doping concentration increases,the optical absorption and electrical properties of the In-ZnO change significantly.Defects and their influence on the In-ZnO single crystals have been analyzed.