%0 Journal Article
%T Bulk Single Crystal Growth and Properties of In-Doped ZnO<br>铟掺杂ZnO体单晶的生长及其性质
%A Zhang Fan
%A Zhao Youwen
%A Dong Zhiyuan
%A Zhang Rui
%A Yang Jun
%A <br>张璠
%A 赵有文
%A 董志远
%A 张瑞
%A 杨俊
%J 半导体学报
%D 2008
%I 
%X The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport (CVT) method.Indium doped n-type ZnO single crystals with a carrier concentration of 1E18~1E19cm-3 have been obtained reproducibly by CVT.The doped indium exhibits high activation efficiency as a shallow donor in a ZnO single crystal.As doping concentration increases,the optical absorption and electrical properties of the In-ZnO change significantly.Defects and their influence on the In-ZnO single crystals have been analyzed.
%K ZnO<br>掺杂
%K 化学气相传输
%K 单晶
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FC1CE7957A0AA5D48B50A0EFE16152E3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=67E1C94EE625F186&eid=815F249353800F81&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19