A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness
考虑载流子速度和耗尽层宽度随电压变化的VBIC模型

The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.