%0 Journal Article
%T A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness<br>考虑载流子速度和耗尽层宽度随电压变化的VBIC模型
%A Ge Ji
%A Jin Zhi
%A Liu Xinyu
%A Cheng Wei
%A Wang Xiantai
%A Chen Gaopeng
%A Wu Dexin
%A <br>葛霁
%A 金智
%A 刘新宇
%A 程伟
%A 王显泰
%A 陈高鹏
%A 吴德馨
%J 半导体学报
%D 2008
%I 
%X The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.
%K carrier velocity
%K depletion-layer thickness
%K collector transit time
%K VBIC model<br>载流子速度
%K 耗尽层宽度
%K 集电区渡越时间
%K VBIC模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AAEE2E7721F0049B00A39A5611A5E562&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=4A88F609574C3C9F&eid=3AF8E7E05757FA19&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14