A different approach for determining the responsivity of n+p detectors using scanning electron microscopy
A Different Approach of Characterizing the Responsivity of n+p Detectors Using Scanning Electron Microscopy

This paper explores an alternative to the standard method of studying the responsivities (the input--output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.