%0 Journal Article
%T A different approach for determining the responsivity of n+p detectors using scanning electron microscopy<br>A Different Approach of Characterizing the Responsivity of n+p Detectors Using Scanning Electron Microscopy
%A Omeime Xerviar Esebamen
%A G&#
%A ran Thungstr&#
%A m
%A Hans-Erik Nilsson
%A <br>Omeime Xerviar Esebamen
%A G&#
%A ran Thungstr&#
%A m
%A Hans-Erik Nilsson
%J 半导体学报
%D 2012
%I 
%X This paper explores an alternative to the standard method of studying the responsivities (the input--output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.
%K scanning slectron microscopy
%K responsivity
%K n p detector<br>扫描电子显微镜
%K 中子探测器
%K p型掺杂
%K 电子能量
%K 输入输出
%K 标准方法
%K 电子辐射
%K 表征方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6054DFDC987AA8B266003F59977F2B99&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=DF92D298D3FF1E6E&sid=97E7F3E54CC665FE&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16