Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer
利用保偏光纤马赫-曾德（MZ）干涉仪测量薄膜材料电光系数

A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy.Unlike a common MZ interferometer,all the components are connected via polarization-maintaining fibers.At the same time,a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio.Here,we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs,KTP,and GaN as comparative samples.The measured EO coefficients show good comparability with the others.