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Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits
降低亚100nm CAM电路的软错误易感性

Keywords: soft error,content addressable memory,reliability,vulnerability,critical charge
软错误
,内容可寻址存储器,可靠性,易感性,关键电荷

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Abstract:

We first study the impacts of soft errors on various types of CAM for different feature sizes. After presenting a soft error immune CAM cell, SSB-RCAM, we propose two kinds of reliable CAM, DCF-RCAM and DCK-RCAM. In addition, we present an ignore mechanism to protect dual cell redundancy CAMs against soft errors. Experimental results indicate that the 11T-NOR CAM cell has an advantage in soft error immunity. Based on 11T-NOR, the proposed reliable CAMs reduce the SER by about 81% on average with acceptable overheads. The SER of dual cell redundancy CAMs can also be decreased using the ignore mechanism in specific applications.

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