%0 Journal Article
%T Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits<br>降低亚100nm CAM电路的软错误易感性
%A Sun Yan
%A Zhang Jiaxing
%A Zhang Minxuan
%A Hao Yue
%A <br>孙岩
%A 张甲兴
%A 张民选
%A 郝跃
%J 半导体学报
%D 2010
%I 
%X We first study the impacts of soft errors on various types of CAM for different feature sizes. After presenting a soft error immune CAM cell, SSB-RCAM, we propose two kinds of reliable CAM, DCF-RCAM and DCK-RCAM. In addition, we present an ignore mechanism to protect dual cell redundancy CAMs against soft errors. Experimental results indicate that the 11T-NOR CAM cell has an advantage in soft error immunity. Based on 11T-NOR, the proposed reliable CAMs reduce the SER by about 81% on average with acceptable overheads. The SER of dual cell redundancy CAMs can also be decreased using the ignore mechanism in specific applications.
%K soft error
%K content addressable memory
%K reliability
%K vulnerability
%K critical charge<br>软错误
%K 内容可寻址存储器
%K 可靠性
%K 易感性
%K 关键电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CFB83DC881ABB09B977867E3E3DD689E&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=0B39A22176CE99FB&sid=602EB69777C36BA5&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12