Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon
Si基外延GaN中位错的光助湿法化学显示

A new method for the light-assisted wet etching of GaN is demonstrated,the light source for which is a tungsten halide lamp.The dislocation density and surface morphology are investigated by scanning electron microscopy and atomic force microscopy,and an optimal etching morphology is obtained.It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.Many hexagonal etching pits,which emergence at the dislocations,are observed.The etching mechanism is discussed,and an optimal etching condition is proposed.