%0 Journal Article
%T Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon<br>Si基外延GaN中位错的光助湿法化学显示
%A Zhao Liwei
%A Liu Caichi
%A Teng Xiaoyun
%A Hao Qiuyan
%A Zhu Junshan
%A Sun Shilong
%A Wang Haiyun
%A Xu Yuesheng
%A Feng Yuchun
%A Guo Baoping
%A <br>赵丽伟
%A 刘彩池
%A 滕晓云
%A 郝秋艳
%A 朱军山
%A 孙世龙
%A 王海云
%A 徐岳生
%A 冯玉春
%A 郭宝平
%J 半导体学报
%D 2006
%I 
%X A new method for the light-assisted wet etching of GaN is demonstrated,the light source for which is a tungsten halide lamp.The dislocation density and surface morphology are investigated by scanning electron microscopy and atomic force microscopy,and an optimal etching morphology is obtained.It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.Many hexagonal etching pits,which emergence at the dislocations,are observed.The etching mechanism is discussed,and an optimal etching condition is proposed.
%K GaN
%K wet etching
%K hexagonal etching pits<br>GaN
%K 湿法化学腐蚀
%K 六角腐蚀坑
%K 外延膜
%K 中位
%K 光助
%K 湿法化学
%K 显示
%K Silicon
%K Dislocations
%K 腐蚀条件
%K 优化
%K 六角腐蚀坑
%K 表面形貌
%K 腐蚀速率
%K 空穴对
%K 电子显微镜
%K 激发
%K 光照
%K 腐蚀机理
%K 图形
%K 位错密度
%K 原子力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=17120E2FC549DF00&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=B31275AF3241DB2D&sid=9A7C41A6BCE530C0&eid=208AC7DC28BD1EC6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8