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半导体学报 2012
An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers
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Abstract:
We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.