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OALib Journal期刊
ISSN: 2333-9721
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An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers
新型碱性阻挡层抛光液对铜布线化学机械平坦化的评估研究

Keywords: barrier CMP,alkaline barrier slurry,surface roughness,dishing
化学机械平坦化
,晶圆,图案,屏障,碱性,商业发展,化学机械研磨,胶体二氧化硅

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Abstract:

We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.

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