%0 Journal Article
%T An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers<br>新型碱性阻挡层抛光液对铜布线化学机械平坦化的评估研究
%A Wang Chenwei
%A Liu Yuling
%A Niu Xinhuan
%A Tian Jianying
%A Gao Baohong
%A Zhang Xiaoqiang
%A <br>王辰伟
%A 刘玉岭
%A 牛新环
%A 田建颖
%A 高宝红
%A 张晓强
%J 半导体学报
%D 2012
%I 
%X We have developed an alkaline barrier slurry (named FA/O slurry) for barrier removal and evaluated its chemical mechanical planarization (CMP) performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.
%K barrier CMP
%K alkaline barrier slurry
%K surface roughness
%K dishing<br>化学机械平坦化
%K 晶圆
%K 图案
%K 屏障
%K 碱性
%K 商业发展
%K 化学机械研磨
%K 胶体二氧化硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CEC329CE751EFFDAECA06ED57EAFBCC3&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=E158A972A605785F&sid=E1ADE7A7712B10AB&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15