X-Band Internally-Matched GaN HEMTs
X波段GaN HEMT内匹配器件

With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW.